Employing the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in lowvoltage, highfrequency inverters, free wheeling diodes, and polarity protection diodes.Extremely Low vFLow Power LossHigh EfficiencyLow Stored Charge, Majority Carrier Conduction Mechanical Characteristics:Case: Epoxy, MoldedWeight: 1.1 gram (approximately)Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily SolderableLead and Mounting Surface Temperature for Soldering Purposes: 220C Max. for 10 Seconds, 116 from casePolarity: Cathode indicated by Polarity BandMarking: 1N5820, 1N5821, 1N5822