Transistors

Our offered Product range includes pd57006-e rf mosfet transistors, BTA08-600(TRIAC), BUS14A POWER TRANSISTOR, 2N2492 GERMANIUM POWER TRANSISTOR and H20R1202.

PD57006-E Transistors RF MOSFET RF POWER TRANS

₹ 1,894.86 / Piece Get Latest Price

Min. Order (MOQ) 1 Piece(s)
Brand Name PD57006-E Transistors RF MOSFET RF POWER TRANS
Model Number PD57006-E
Transistor Polarity: N-Channel

Configuration: single transistor polarity: n-channel frequency: 1 ghz gain: 15 db at 945 mhz output power: 6 w drain-source breakdown voltage: 65 v continuous drain current: 1 a gate-source breakdown voltage: +- 20 v maximum operating temperature: + 150 c mounting style: smdsmt package case: powerso-10rf (formed lead) packaging: tube forward transconductance - min: 0.58 s minimum operating temperature: - 65 c power dissipation: 20 w product type: rf mosfet power.

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BTA08-600(TRIAC)

₹ 71.34 / Piece Get Latest Price

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On-State Voltage 1.75 V

Non repetitive on-state current: 84 a rated repetitive off-state voltage vdrm: 400 v off-state leakage current @ vdrm idrm: 5 ua on-state voltage: 1.75 v holding current (ih max): 50 ma gate trigger voltage (vgt): 1.5 v gate trigger current (igt): 100 ma mounting style: through hole package case: to-220ab packaging: tube factory pack quantity: 1000.

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BUS14A POWER TRANSITOR BUS14 Trans GP BJT NPN 400V 30A 3-Pin(2+Tab) TO-3

₹ 1,137.09 / Piece Get Latest Price

Min. Order (MOQ) 1 Piece(s)
Type NPN

Type NPN Maximum Power Dissipation 250000 mWMaximum DC Collector Current: 30 AMaximum Collector Emitter Voltage: 400 VConfiguration : Single Category: Bipolar Power

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2N2492 GERMANIUM POWER TRANSISTOR

₹ 474.15 / Piece Get Latest Price

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Material of transistor: Ge

Type Designator: 2N2492Material of transistor: GePolarity: PNPMaximum collector power dissipation (Pc), W: 170Maximum collector-base voltage Ucb, V: 80Maximum collector-emitter voltage Uce, V: 65Maximum emitter-base voltage Ueb, V: 60Maximum collector current Ic max, A: 15Maksimalna temperatura (Tj), C: 110Transition frequency (ft), MHz: 0.125Collector capacitance (Cc), pF:Forward current transfer ratio (hFE), min: 25Noise Figure, dB: -Package of 2N2492 transistor: TO36

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H20R1202

₹ 474.15 / Piece Get Latest Price

Min. Order (MOQ) 1 Piece(s)
Quality Good

Wholesale - MOSFET H20R1202 20R1202 IGBT 20A 1200V TO-3P triode transistor audion good quality and ROHS

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2N3055 TO-3 POWER TRANSISTOR

₹ 94.83 / Piece Get Latest Price

Min. Order (MOQ) 1 Piece(s)
Transistor Polarity: NPN

Transistor, npn, 60v, 15a, to-3transistor polarity: npncollector emitter voltage v(br)ceo: 60vpower dissipation pd: 115wdc collector current: 15adc current gain hfe: 70transistor case style: to-3no. Of pins: 2svhc: no svhc (19-dec-2012)collector emitter voltage vces: 1vcontinuous collector current ic max: 15acurrent ic continuous a max: 15acurrent ic hfe: 10afull power rating temperature: 25cgain bandwidth ft min: 3mhzhfe min: 5no. Of transistors: 1package case: to-3power dissipation ptot max: 115wvoltage vcbo: 100v

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