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Next Power Electronics L.L.C

Next Power Electronics L.L.C
location Dubai, United Arab Emirates

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Our Products

  1. Rectifiers 16 Products available
  2. Capacitor 10 Products available
  3. Transistors 6 Products available
  4. Sensors And Transducers 3 Products available
  5. Temperature Controller 3 Products available
  6. Inverters, UPS & Converters

    2 Products available
  7. Automotive Components

    2 Products available
  8. Thyristor

    2 Products available
  9. Power Converter

    2 Products available
  10. Others Products 51 Products available

Transistors

We offer a complete product range of pd57006-e rf mosfet transistors, BTA08-600(TRIAC), BUS14A POWER TRANSISTOR, 2N2492 GERMANIUM POWER TRANSISTOR and H20R1202

PD57006-E Transistors RF MOSFET RF POWER TRANS

1,905.75 /Piece Get Latest Price
  • Min. Order (MOQ) 1 Piece(s)
  • Brand Name PD57006-E Transistors RF MOSFET RF POWER TRANS
  • Model Number PD57006-E
  • Transistor Polarity: N-Channel
Configuration: single transistor polarity: n-channel frequency: 1 ghz gain: 15 db at 945 mhz output power: 6 w drain-source breakdown voltage: 65 v continuous drain current: 1 a gate-source breakdown voltage: +- 20 v maximum operating temperature: + 150 c mounting style: smdsmt package case: powerso-10rf (formed lead) packaging: tube forward transconductance - min: 0.58 s minimum operating temperature: - 65 c power dissipation: 20 w product type: rf mosfet power.
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BTA08-600(TRIAC)

71.75 /Piece Get Latest Price
  • Min. Order (MOQ) 1 Piece(s)
  • On-State Voltage 1.75 V
Non repetitive on-state current: 84 a rated repetitive off-state voltage vdrm: 400 v off-state leakage current @ vdrm idrm: 5 ua on-state voltage: 1.75 v holding current (ih max): 50 ma gate trigger voltage (vgt): 1.5 v gate trigger current (igt): 100 ma mounting style: through hole package case: to-220ab packaging: tube factory pack quantity: 1000.
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BUS14A POWER TRANSITOR BUS14 Trans GP BJT NPN 400V 30A 3-Pin(2+Tab) TO-3

1,143.63 /Piece Get Latest Price
  • Min. Order (MOQ) 1 Piece(s)
  • Type NPN
Type NPN Maximum Power Dissipation 250000 mWMaximum DC Collector Current: 30 AMaximum Collector Emitter Voltage: 400 VConfiguration : Single Category: Bipolar Power
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2N2492 GERMANIUM POWER TRANSISTOR

476.88 /Piece Get Latest Price
  • Min. Order (MOQ) 1 Piece(s)
  • Material of transistor: Ge
Type Designator: 2N2492Material of transistor: GePolarity: PNPMaximum collector power dissipation (Pc), W: 170Maximum collector-base voltage Ucb, V: 80Maximum collector-emitter voltage Uce, V: 65Maximum emitter-base voltage Ueb, V: 60Maximum collector current Ic max, A: 15Maksimalna temperatura (Tj), C: 110Transition frequency (ft), MHz: 0.125Collector capacitance (Cc), pF:Forward current transfer ratio (hFE), min: 25Noise Figure, dB: -Package of 2N2492 transistor: TO36
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H20R1202

476.88 /Piece Get Latest Price
  • Min. Order (MOQ) 1 Piece(s)
  • Quality Good
Wholesale - MOSFET H20R1202 20R1202 IGBT 20A 1200V TO-3P triode transistor audion good quality and ROHS
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2N3055 TO-3 POWER TRANSISTOR

95.38 /Piece Get Latest Price
  • Min. Order (MOQ) 1 Piece(s)
  • Transistor Polarity: NPN
Transistor, npn, 60v, 15a, to-3transistor polarity: npncollector emitter voltage v(br)ceo: 60vpower dissipation pd: 115wdc collector current: 15adc current gain hfe: 70transistor case style: to-3no. Of pins: 2svhc: no svhc (19-dec-2012)collector emitter voltage vces: 1vcontinuous collector current ic max: 15acurrent ic continuous a max: 15acurrent ic hfe: 10afull power rating temperature: 25cgain bandwidth ft min: 3mhzhfe min: 5no. Of transistors: 1package case: to-3power dissipation ptot max: 115wvoltage vcbo: 100v
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